PBSS4350SA_R1_00001
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- Mfr.Part #
- PBSS4350SA_R1_00001
- Manufacturer
- PANJIT
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A SC59
- Stock
- 29,668
- In Stock ：
- 29,668
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- Manufacturer :
- PANJIT
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Series :
- GPT-13TDN
- Supplier Device Package :
- SC-59
- Frequency - Transition :
- 100MHz
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 300mA, 3A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 1.25 W
- Product Status :
- Not For New Designs
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 3 A
- Datasheets
- PBSS4350SA_R1_00001
NPN -55°C ~ 150°C (TJ) 100nA TO-236-3, SC-59, SOT-23-3 Surface Mount
PBSS4350SA_R1_00001 Overview
In this device, the DC current gain is 300 @ 1A, 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 370mV @ 300mA, 3A.Supplier device package SC-59 comes with the product.The device exhibits a collector-emitter breakdown at 50 V.
PBSS4350SA_R1_00001 Features
the DC current gain for this device is 300 @ 1A, 2V
the vce saturation(Max) is 370mV @ 300mA, 3A
the supplier device package of SC-59
PBSS4350SA_R1_00001 Applications
There are a lot of Panjit
PBSS4350SA_R1_00001 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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