PBSS4330X,135
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- Mfr.Part #
- PBSS4330X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A SOT89
- Stock
- 108,494
- In Stock ：
- 108,494
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Published :
- 2009
- Max Power Dissipation :
- 1.6W
- JESD-30 Code :
- R-PSSO-F3
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 50V
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 30V
- Max Collector Current :
- 3A
- Base Part Number :
- PBSS4330
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Transition Frequency :
- 100MHz
- Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.6W
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 300mA, 3A
- Collector Emitter Voltage (VCEO) :
- 30V
- Case Connection :
- COLLECTOR
- Number of Pins :
- 4
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 1A 2V
- Package / Case :
- TO-243AA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 100MHz
- Terminal Form :
- Flat
- JESD-609 Code :
- e3
- Datasheets
- PBSS4330X,135
SOT89.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4330X,135 Overview
In this device, the DC current gain is 270 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 300mA, 3A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
PBSS4330X,135 Features
the DC current gain for this device is 270 @ 1A 2V
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4330X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4330X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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