PBSS4320T,215
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- Mfr.Part #
- PBSS4320T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 2A TO236AB
- Stock
- 225,487
- In Stock ：
- 225,487
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Power - Max :
- 540mW
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 300mW
- Collector Emitter Breakdown Voltage :
- 20V
- Published :
- 2002
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 20V
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 300mA, 3A
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Weight :
- 4.535924g
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 20V
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 20V
- Max Collector Current :
- 2A
- Height :
- 6.35mm
- Contact Plating :
- Tin
- Width :
- 6.35mm
- Length :
- 6.35mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- hFE Min :
- 220
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Power Dissipation :
- 1.2W
- Base Part Number :
- PBSS4320
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 1A 2V
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Datasheets
- PBSS4320T,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4320T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 310mV @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4320T,215 Features
the DC current gain for this device is 220 @ 1A 2V
the vce saturation(Max) is 310mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4320T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4320T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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