PBSS4230T,215
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- Mfr.Part #
- PBSS4230T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 2A TO236AB
- Stock
- 4,837
- In Stock ：
- 4,837
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Length :
- 6.35mm
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 40V
- Published :
- 2009
- Number of Pins :
- 3
- Transition Frequency :
- 230MHz
- Pin Count :
- 3
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 30V
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 480mW
- hFE Min :
- 300
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 30V
- Frequency :
- 230MHz
- Factory Lead Time :
- 4 Weeks
- Weight :
- 4.535924g
- Width :
- 6.35mm
- Base Part Number :
- PBSS4230
- Gain Bandwidth Product :
- 230MHz
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN
- Height :
- 6.35mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Max Power Dissipation :
- 480mW
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Max Collector Current :
- 2A
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Datasheets
- PBSS4230T,215
PBSS4230T,215 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4230T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 230MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4230T,215 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz
PBSS4230T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4230T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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