PBSS4230T,215
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- Mfr.Part #
- PBSS4230T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 2A TO236AB
- Stock
- 4,837
- In Stock ：
- 4,837
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 230MHz
- Length :
- 6.35mm
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 230MHz
- Published :
- 2009
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 40V
- Max Collector Current :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Mount :
- Surface Mount
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Height :
- 6.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 480mW
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Weight :
- 4.535924g
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 30V
- Base Part Number :
- PBSS4230
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Width :
- 6.35mm
- Transistor Type :
- NPN
- hFE Min :
- 300
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Power Dissipation :
- 480mW
- Max Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Frequency :
- 230MHz
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Polarity/Channel Type :
- NPN
- Datasheets
- PBSS4230T,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4230T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 230MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4230T,215 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz
PBSS4230T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4230T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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