PBSS4230T,215
- Mfr.Part #
- PBSS4230T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 2A TO236AB
- Stock
- 4,837
- In Stock :
- 4,837
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- PBSS4230
- Weight :
- 4.535924g
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- hFE Min :
- 300
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2009
- Collector Base Voltage (VCBO) :
- 40V
- Gain Bandwidth Product :
- 230MHz
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Frequency :
- 230MHz
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 30V
- Pin Count :
- 3
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Height :
- 6.35mm
- Max Power Dissipation :
- 480mW
- Max Collector Current :
- 2A
- Terminal Form :
- Gull wing
- Width :
- 6.35mm
- Length :
- 6.35mm
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 480mW
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 230MHz
- Element Configuration :
- Single
- Datasheets
- PBSS4230T,215
PBSS4230T,215 Documents

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4230T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 230MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4230T,215 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz
PBSS4230T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4230T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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