PBSS4230T,215

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Mfr.Part #
PBSS4230T,215
Manufacturer
Nexperia
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 30V 2A TO236AB
Stock
4,837
In Stock :
4,837

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Base Part Number :
PBSS4230
Weight :
4.535924g
Operating Temperature :
150°C TJ
Mount :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
320mV @ 200mA, 2A
hFE Min :
300
ECCN Code :
EAR99
Number of Terminations :
3
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Type :
NPN
Emitter Base Voltage (VEBO) :
5V
Published :
2009
Collector Base Voltage (VCBO) :
40V
Gain Bandwidth Product :
230MHz
Transistor Element Material :
SILICON
Max Breakdown Voltage :
30V
JESD-609 Code :
e3
Frequency :
230MHz
Radiation Hardening :
No
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Finish :
Tin (Sn)
Collector Emitter Voltage (VCEO) :
30V
Pin Count :
3
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Height :
6.35mm
Max Power Dissipation :
480mW
Max Collector Current :
2A
Terminal Form :
Gull wing
Width :
6.35mm
Length :
6.35mm
Polarity/Channel Type :
NPN
Lead Free :
Lead Free
Factory Lead Time :
4 Weeks
Collector Emitter Breakdown Voltage :
30V
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
480mW
Terminal Position :
Dual
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 1A 2V
Transistor Application :
SWITCHING
Transition Frequency :
230MHz
Element Configuration :
Single
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS4230T,215 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:PBSS4230, Operating Temperature:150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Number of Terminations:3, Number of Pins:3, PBSS4230T,215 pinout, PBSS4230T,215 datasheet PDF, PBSS4230T,215 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS4230T,215 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS4230T,215


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

PBSS4230T,215 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 230MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2A volts.

PBSS4230T,215 Features


the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz


PBSS4230T,215 Applications


There are a lot of Nexperia USA Inc.
PBSS4230T,215 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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