PBSS4220V,115
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- Mfr.Part #
- PBSS4220V,115
- Manufacturer
- Nexperia
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS NPN 20V 2A SOT666
- Stock
- 265
- In Stock ：
- 265
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Voltage (VCEO) :
- 20V
- Gain Bandwidth Product :
- 210MHz
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 210MHz
- Pin Count :
- 6
- Number of Elements :
- 1
- Published :
- 2009
- Number of Pins :
- 6
- Collector Base Voltage (VCBO) :
- 20V
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 20V
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 2A
- Package / Case :
- SOT-563, SOT-666
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 900mW
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 6
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- Terminal Position :
- Dual
- Power Dissipation :
- 900mW
- Collector Emitter Breakdown Voltage :
- 20V
- Element Configuration :
- Single
- Base Part Number :
- PBSS4220
- Frequency :
- 210MHz
- Datasheets
- PBSS4220V,115
NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
PBSS4220V,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 210MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 2A volts at its maximum.
PBSS4220V,115 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 210MHz
PBSS4220V,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4220V,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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