PBSS4220V,115
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- Mfr.Part #
- PBSS4220V,115
- Manufacturer
- Nexperia
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS NPN 20V 2A SOT666
- Stock
- 265
- In Stock ：
- 265
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- PBSS4220
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Pin Count :
- 6
- Collector Emitter Voltage (VCEO) :
- 20V
- Mounting Type :
- Surface Mount
- Frequency :
- 210MHz
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Package / Case :
- SOT-563, SOT-666
- Terminal Form :
- Flat
- Terminal Position :
- Dual
- Transition Frequency :
- 210MHz
- Collector Emitter Breakdown Voltage :
- 20V
- Max Power Dissipation :
- 900mW
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Number of Terminations :
- 6
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Pins :
- 6
- Published :
- 2009
- Collector Base Voltage (VCBO) :
- 20V
- Max Collector Current :
- 2A
- Mount :
- Surface Mount
- Power Dissipation :
- 900mW
- Max Breakdown Voltage :
- 20V
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 210MHz
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Datasheets
- PBSS4220V,115
PBSS4220V,115 Documents
NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
PBSS4220V,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 210MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 2A volts at its maximum.
PBSS4220V,115 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 210MHz
PBSS4220V,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4220V,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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