PBSS4220V,115
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- Mfr.Part #
- PBSS4220V,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS4220V - SMALL S
- Stock
- 265
- In Stock ：
- 265
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 210MHz
- Max Collector Current :
- 2A
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 900mW
- Collector Emitter Voltage (VCEO) :
- 20V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Power Dissipation :
- 900mW
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 20V
- Package / Case :
- SOT-563, SOT-666
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 20V
- Number of Pins :
- 6
- Transition Frequency :
- 210MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Base Part Number :
- PBSS4220
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 6
- Published :
- 2009
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Number of Terminations :
- 6
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Terminal Form :
- Flat
- Frequency :
- 210MHz
- Datasheets
- PBSS4220V,115
NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
PBSS4220V,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 210MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 2A volts at its maximum.
PBSS4220V,115 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 210MHz
PBSS4220V,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4220V,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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