PBSS4220V,115

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Mfr.Part #
PBSS4220V,115
Manufacturer
NXP Semiconductors
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
NOW NEXPERIA PBSS4220V - SMALL S
Stock
265
In Stock :
265

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Position :
Dual
Pin Count :
6
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
350mV @ 200mA, 2A
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
5V
RoHS Status :
ROHS3 Compliant
Power Dissipation :
900mW
Transistor Type :
NPN
Polarity/Channel Type :
NPN
Collector Base Voltage (VCBO) :
20V
Current - Collector Cutoff (Max) :
100nA
Transistor Application :
SWITCHING
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 1A 2V
Packaging :
Tape and Reel (TR)
Operating Temperature :
150°C TJ
Base Part Number :
PBSS4220
Number of Terminations :
6
Max Power Dissipation :
900mW
Terminal Form :
Flat
Collector Emitter Voltage (VCEO) :
20V
Collector Emitter Breakdown Voltage :
20V
Package / Case :
SOT-563, SOT-666
Element Configuration :
Single
Terminal Finish :
Tin (Sn)
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2009
Radiation Hardening :
No
Max Breakdown Voltage :
20V
Mounting Type :
Surface Mount
Max Collector Current :
2A
Gain Bandwidth Product :
210MHz
Number of Elements :
1
Number of Pins :
6
JESD-609 Code :
e3
Transition Frequency :
210MHz
Lead Free :
Lead Free
Frequency :
210MHz
Factory Lead Time :
4 Weeks
Datasheets
PBSS4220V,115
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4220V,115 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:PBSS4220, Number of Terminations:6, Package / Case:SOT-563, SOT-666, Mounting Type:Surface Mount, Number of Pins:6, PBSS4220V,115 pinout, PBSS4220V,115 datasheet PDF, PBSS4220V,115 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4220V,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PBSS4220V,115


NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount

PBSS4220V,115 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 210MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 2A volts at its maximum.

PBSS4220V,115 Features


the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 210MHz


PBSS4220V,115 Applications


There are a lot of Nexperia USA Inc.
PBSS4220V,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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