PBSS4220V,115
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- Mfr.Part #
- PBSS4220V,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS4220V - SMALL S
- Stock
- 265
- In Stock ：
- 265
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 210MHz
- Base Part Number :
- PBSS4220
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 6
- Pin Count :
- 6
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Package / Case :
- SOT-563, SOT-666
- Power Dissipation :
- 900mW
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Number of Terminations :
- 6
- Terminal Form :
- Flat
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 900mW
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 210MHz
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 2A
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- Max Breakdown Voltage :
- 20V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Published :
- 2009
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 20V
- Transition Frequency :
- 210MHz
- Collector Base Voltage (VCBO) :
- 20V
- Datasheets
- PBSS4220V,115
NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
PBSS4220V,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 210MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 2A volts at its maximum.
PBSS4220V,115 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 210MHz
PBSS4220V,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4220V,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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