PBSS4220V,115
- Mfr.Part #
- PBSS4220V,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS4220V - SMALL S
- Stock
- 265
- In Stock :
- 265
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Pin Count :
- 6
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 900mW
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 20V
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- PBSS4220
- Number of Terminations :
- 6
- Max Power Dissipation :
- 900mW
- Terminal Form :
- Flat
- Collector Emitter Voltage (VCEO) :
- 20V
- Collector Emitter Breakdown Voltage :
- 20V
- Package / Case :
- SOT-563, SOT-666
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 20V
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 2A
- Gain Bandwidth Product :
- 210MHz
- Number of Elements :
- 1
- Number of Pins :
- 6
- JESD-609 Code :
- e3
- Transition Frequency :
- 210MHz
- Lead Free :
- Lead Free
- Frequency :
- 210MHz
- Factory Lead Time :
- 4 Weeks
- Datasheets
- PBSS4220V,115

NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
PBSS4220V,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 210MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 2A volts at its maximum.
PBSS4220V,115 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 210MHz
PBSS4220V,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4220V,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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