PBSS4160T,215
- Mfr.Part #
- PBSS4160T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A TO236AB
- Stock
- 276,790
- In Stock :
- 276,790
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Length :
- 6.35mm
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 220MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Max Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- Power Dissipation :
- 1.25W
- Mounting Type :
- Surface Mount
- Published :
- 2001
- Collector Base Voltage (VCBO) :
- 80V
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Height :
- 6.35mm
- Weight :
- 4.535924g
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 100mA, 1A
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Radiation Hardening :
- No
- hFE Min :
- 250
- Max Power Dissipation :
- 270mW
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 220MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Polarity/Channel Type :
- NPN
- Base Part Number :
- PBSS4160
- Power - Max :
- 400mW
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 1A
- Transition Frequency :
- 220MHz
- Number of Pins :
- 3
- Width :
- 6.35mm
- Datasheets
- PBSS4160T,215

NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4160T,215 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 220MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
PBSS4160T,215 Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz
PBSS4160T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4160T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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