PBSS4160T,215

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Mfr.Part #
PBSS4160T,215
Manufacturer
Nexperia
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 60V 1A TO236AB
Stock
276,790
In Stock :
276,790

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Length :
6.35mm
Element Configuration :
Single
Terminal Form :
Gull wing
Transistor Type :
NPN
Terminal Position :
Dual
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-236-3, SC-59, SOT-23-3
Frequency :
220MHz
Current - Collector Cutoff (Max) :
100nA
Max Breakdown Voltage :
60V
Number of Terminations :
3
Power Dissipation :
1.25W
Mounting Type :
Surface Mount
Published :
2001
Collector Base Voltage (VCBO) :
80V
REACH SVHC :
No SVHC
Packaging :
Tape and Reel (TR)
Collector Emitter Breakdown Voltage :
60V
Transistor Application :
SWITCHING
Collector Emitter Voltage (VCEO) :
60V
ECCN Code :
EAR99
Mount :
Surface Mount
Height :
6.35mm
Weight :
4.535924g
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Vce Saturation (Max) @ Ib, Ic :
250mV @ 100mA, 1A
Operating Temperature :
150°C TJ
Pin Count :
3
Radiation Hardening :
No
hFE Min :
250
Max Power Dissipation :
270mW
Emitter Base Voltage (VEBO) :
5V
Factory Lead Time :
4 Weeks
Time@Peak Reflow Temperature-Max (s) :
40
Gain Bandwidth Product :
220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 5V
Polarity/Channel Type :
NPN
Base Part Number :
PBSS4160
Power - Max :
400mW
Terminal Finish :
Tin (Sn)
Lead Free :
Lead Free
Peak Reflow Temperature (Cel) :
260
Max Collector Current :
1A
Transition Frequency :
220MHz
Number of Pins :
3
Width :
6.35mm
Datasheets
PBSS4160T,215
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS4160T,215 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Base Part Number:PBSS4160, Number of Pins:3, PBSS4160T,215 pinout, PBSS4160T,215 datasheet PDF, PBSS4160T,215 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS4160T,215 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS4160T,215


NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

PBSS4160T,215 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 220MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

PBSS4160T,215 Features


the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz


PBSS4160T,215 Applications


There are a lot of Nexperia USA Inc.
PBSS4160T,215 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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