PBSS4160K,115
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- Mfr.Part #
- PBSS4160K,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.75A SMT3
- Stock
- 45,280
- In Stock ：
- 45,280
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 220MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Power - Max :
- 425mW
- Vce Saturation (Max) @ Ib, Ic :
- 280mV @ 100mA, 1A
- Published :
- 2005
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- PBSS4160
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 750mA
- Mounting Type :
- Surface Mount
- Datasheets
- PBSS4160K,115
NPN 150°C TJ 100nA TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4160K,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
PBSS4160K,115 Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 280mV @ 100mA, 1A
PBSS4160K,115 Applications
There are a lot of NXP USA Inc.
PBSS4160K,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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