PBSS4041PZ,115

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Mfr.Part #
PBSS4041PZ,115
Manufacturer
Nexperia
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 60V 5.7A SOT223
Stock
29,817
In Stock :
29,817

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Number of Pins :
4
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Transistor Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2A 2V
hFE Min :
200
Package / Case :
TO-261-4, TO-261AA
Operating Temperature :
150°C TJ
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Max Collector Current :
5.7A
Gain Bandwidth Product :
110MHz
Packaging :
Tape and Reel (TR)
Terminal Finish :
Tin (Sn)
Base Part Number :
PBSS4041P
Vce Saturation (Max) @ Ib, Ic :
285mV @ 300mA, 6A
Max Power Dissipation :
2.6W
Frequency :
110MHz
Emitter Base Voltage (VEBO) :
-5V
Collector Emitter Voltage (VCEO) :
60V
Published :
2010
Pin Count :
4
Mount :
Surface Mount
Collector Base Voltage (VCBO) :
60V
Power Dissipation :
2.6W
Collector Emitter Breakdown Voltage :
60V
Max Breakdown Voltage :
60V
Current - Collector Cutoff (Max) :
100nA
Mounting Type :
Surface Mount
Factory Lead Time :
4 Weeks
Datasheets
PBSS4041PZ,115
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS4041PZ,115 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Package / Case:TO-261-4, TO-261AA, Operating Temperature:150°C TJ, Base Part Number:PBSS4041P, Mounting Type:Surface Mount, PBSS4041PZ,115 pinout, PBSS4041PZ,115 datasheet PDF, PBSS4041PZ,115 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS4041PZ,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS4041PZ,115


PNP 150°C TJ 100nA 1 Elements TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

PBSS4041PZ,115 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2A 2V.When VCE saturation is 285mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 5.7A volts can be achieved.

PBSS4041PZ,115 Features


the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 285mV @ 300mA, 6A
the emitter base voltage is kept at -5V


PBSS4041PZ,115 Applications


There are a lot of Nexperia USA Inc.
PBSS4041PZ,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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