PBSS4041PZ,115

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Mfr.Part #
PBSS4041PZ,115
Manufacturer
Nexperia
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 60V 5.7A SOT223
Stock
29,817
In Stock :
29,817

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
60V
Emitter Base Voltage (VEBO) :
-5V
Frequency :
110MHz
Max Collector Current :
5.7A
Base Part Number :
PBSS4041P
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2A 2V
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
285mV @ 300mA, 6A
Factory Lead Time :
4 Weeks
JESD-609 Code :
e3
Collector Emitter Breakdown Voltage :
60V
Current - Collector Cutoff (Max) :
100nA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
Radiation Hardening :
No
Max Breakdown Voltage :
60V
Pin Count :
4
Published :
2010
Mount :
Surface Mount
Max Power Dissipation :
2.6W
Element Configuration :
Single
hFE Min :
200
Package / Case :
TO-261-4, TO-261AA
Gain Bandwidth Product :
110MHz
Collector Emitter Voltage (VCEO) :
60V
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Transistor Type :
PNP
Operating Temperature :
150°C TJ
Power Dissipation :
2.6W
Mounting Type :
Surface Mount
Number of Pins :
4
Datasheets
PBSS4041PZ,115
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS4041PZ,115 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:PBSS4041P, Package / Case:TO-261-4, TO-261AA, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Pins:4, PBSS4041PZ,115 pinout, PBSS4041PZ,115 datasheet PDF, PBSS4041PZ,115 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS4041PZ,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS4041PZ,115


PNP 150°C TJ 100nA 1 Elements TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

PBSS4041PZ,115 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2A 2V.When VCE saturation is 285mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 5.7A volts can be achieved.

PBSS4041PZ,115 Features


the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 285mV @ 300mA, 6A
the emitter base voltage is kept at -5V


PBSS4041PZ,115 Applications


There are a lot of Nexperia USA Inc.
PBSS4041PZ,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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