PBSS4041PZ,115

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Mfr.Part #
PBSS4041PZ,115
Manufacturer
Nexperia
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 60V 5.7A SOT223
Stock
29,817
In Stock :
29,817

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
-5V
Gain Bandwidth Product :
110MHz
Published :
2010
Radiation Hardening :
No
Factory Lead Time :
4 Weeks
Current - Collector Cutoff (Max) :
100nA
Max Power Dissipation :
2.6W
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
60V
RoHS Status :
ROHS3 Compliant
Frequency :
110MHz
hFE Min :
200
Max Collector Current :
5.7A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
60V
Pin Count :
4
Operating Temperature :
150°C TJ
Max Breakdown Voltage :
60V
Base Part Number :
PBSS4041P
JESD-609 Code :
e3
Power Dissipation :
2.6W
Packaging :
Tape and Reel (TR)
Terminal Finish :
Tin (Sn)
Vce Saturation (Max) @ Ib, Ic :
285mV @ 300mA, 6A
Number of Pins :
4
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2A 2V
Element Configuration :
Single
Package / Case :
TO-261-4, TO-261AA
Mount :
Surface Mount
Mounting Type :
Surface Mount
Collector Base Voltage (VCBO) :
60V
Transistor Type :
PNP
Datasheets
PBSS4041PZ,115
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS4041PZ,115 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:PBSS4041P, Number of Pins:4, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, PBSS4041PZ,115 pinout, PBSS4041PZ,115 datasheet PDF, PBSS4041PZ,115 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS4041PZ,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS4041PZ,115


PNP 150°C TJ 100nA 1 Elements TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

PBSS4041PZ,115 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2A 2V.When VCE saturation is 285mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 5.7A volts can be achieved.

PBSS4041PZ,115 Features


the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 285mV @ 300mA, 6A
the emitter base voltage is kept at -5V


PBSS4041PZ,115 Applications


There are a lot of Nexperia USA Inc.
PBSS4041PZ,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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