PBSS4041NZ115
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- Mfr.Part #
- PBSS4041NZ115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS4041NZ SMALL SI
- Stock
- 2,346
- In Stock ：
- 2,346
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Base Part Number :
- PBSS4041N
- Gain Bandwidth Product :
- 105MHz
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 4A 2V
- Transistor Type :
- NPN
- hFE Min :
- 300
- Published :
- 2010
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 2.6W
- Max Breakdown Voltage :
- 60V
- Max Collector Current :
- 7A
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 195mV @ 350mA, 7A
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA
- Pin Count :
- 4
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 2.6W
- Datasheets
- PBSS4041NZ115
Specialized ICs NXP Semiconductors PBSS4041NZ115 Overview
Specialized ICs NXP Semiconductors PBSS4041NZ115 is a highly efficient, low-voltage, single bipolar junction transistor (BJT) that excels in performance under extreme thermal conditions with a maximum operating temperature of 150°C. This device features a collector-emitter saturation voltage of 195mV at 350mA and a high DC current gain of 250 at 4A, 2V, making it ideal for high-efficiency applications. The breakdown voltage of 60V and a low leakage current of 100nA ensure reliability and stability in various operating conditions. Designed for surface mounting, it comes packaged in TO-261-4, TO-261AA Tape & Reel (TR) for streamlined manufacturing processes.
Key Features
The Specialized ICs NXP Semiconductors PBSS4041NZ115 boasts several key features that enhance its applicability in high-performance environments:
- High DC current gain of 250 at 4A, 2V
- Low collector-emitter saturation voltage of 195mV at 350mA, 7A
- Maximum operating temperature of 150°C, suitable for thermal intensive applications
- Breakdown voltage of 60V with a minimal leakage current of 100nA
- Available in TO-261-4, TO-261AA Tape & Reel (TR) formats for efficient surface mounting
Applications
The versatility of the Specialized ICs NXP Semiconductors PBSS4041NZ115 makes it suitable for a variety of applications, including:
- Inverters
- Interface circuits
- Driver modules
- Muting circuits
This HTML document segments the description of the PBSS4041NZ115 transistor into three main sections: Overview, Key Features, and Applications, highlighting its specifications and potential uses in a professional and engaging manner suitable for B2B customers.
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