PBSS4041NX,115
- Mfr.Part #
- PBSS4041NX,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 6.2A SOT89
- Stock
- 30,322
- In Stock :
- 30,322
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 4A 2V
- Transistor Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 150mV
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 2.5W
- Frequency :
- 130MHz
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 60V
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- PBSS4041N
- hFE Min :
- 75
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Height :
- 1.6mm
- Collector Base Voltage (VCBO) :
- 60V
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Max Junction Temperature (Tj) :
- 150°C
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 300mA, 6A
- Number of Pins :
- 4
- Transition Frequency :
- 130MHz
- Ambient Temperature Range High :
- 150°C
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 6.2A
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 2.5W
- Mount :
- Surface Mount
- Terminal Form :
- Flat
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 130MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Package / Case :
- TO-243AA
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- JESD-30 Code :
- R-PSSO-F3
- Datasheets
- PBSS4041NX,115
SOT89.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4041NX,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 4A 2V DC current gain.As it features a collector emitter saturation voltage of 150mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 130MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 6.2A volts.
PBSS4041NX,115 Features
the DC current gain for this device is 150 @ 4A 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 210mV @ 300mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
PBSS4041NX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4041NX,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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