PBSS4041NT,215
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- Mfr.Part #
- PBSS4041NT,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3.8A TO236AB
- Stock
- 85
- In Stock ：
- 85
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Frequency :
- 175MHz
- Polarity/Channel Type :
- NPN
- Base Part Number :
- PBSS4041N
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 175MHz
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Transition Frequency :
- 175MHz
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 100nA
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 4A
- Pin Count :
- 3
- Published :
- 2009
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Breakdown Voltage :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 1.1W
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 3.8A
- Number of Pins :
- 3
- Power Dissipation :
- 1.1W
- Collector Base Voltage (VCBO) :
- 60V
- Operating Temperature :
- 150°C TJ
- Packaging :
- Cut Tape (CT)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2A 2V
- hFE Min :
- 30
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Datasheets
- PBSS4041NT,215
PBSS4041NT,215 Documents
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
PBSS4041NT,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 200mA, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 175MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 3.8A volts.
PBSS4041NT,215 Features
the DC current gain for this device is 120 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 175MHz
PBSS4041NT,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4041NT,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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