PBSS4041NT,215
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- Mfr.Part #
- PBSS4041NT,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3.8A TO236AB
- Stock
- 85
- In Stock ：
- 85
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 1.1W
- Frequency :
- 175MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- hFE Min :
- 30
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Transition Frequency :
- 175MHz
- Max Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2009
- REACH SVHC :
- No SVHC
- Packaging :
- Cut Tape (CT)
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 175MHz
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1.1W
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2A 2V
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- PBSS4041N
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 4A
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 3.8A
- Datasheets
- PBSS4041NT,215
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
PBSS4041NT,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 200mA, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 175MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 3.8A volts.
PBSS4041NT,215 Features
the DC current gain for this device is 120 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 175MHz
PBSS4041NT,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4041NT,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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