PBSS4041NT,215
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- Mfr.Part #
- PBSS4041NT,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3.8A TO236AB
- Stock
- 85
- In Stock ：
- 85
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1.1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2A 2V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 4A
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Published :
- 2009
- Gain Bandwidth Product :
- 175MHz
- Max Power Dissipation :
- 1.1W
- Collector Base Voltage (VCBO) :
- 60V
- Max Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Frequency :
- 175MHz
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- Element Configuration :
- Single
- Number of Pins :
- 3
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- hFE Min :
- 30
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Max Collector Current :
- 3.8A
- Base Part Number :
- PBSS4041N
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 60V
- Transition Frequency :
- 175MHz
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Packaging :
- Cut Tape (CT)
- Datasheets
- PBSS4041NT,215
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
PBSS4041NT,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 200mA, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 175MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 3.8A volts.
PBSS4041NT,215 Features
the DC current gain for this device is 120 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 175MHz
PBSS4041NT,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4041NT,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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