PBSS4041NT,215
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- Mfr.Part #
- PBSS4041NT,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3.8A TO236AB
- Stock
- 85
- In Stock ：
- 85
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2A 2V
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Power Dissipation :
- 1.1W
- hFE Min :
- 30
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Power Dissipation :
- 1.1W
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Frequency :
- 175MHz
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 60V
- Max Breakdown Voltage :
- 60V
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Packaging :
- Cut Tape (CT)
- Base Part Number :
- PBSS4041N
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 4 Weeks
- Published :
- 2009
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 175MHz
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 3.8A
- Gain Bandwidth Product :
- 175MHz
- Mount :
- Surface Mount
- Datasheets
- PBSS4041NT,215
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
PBSS4041NT,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 200mA, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 175MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 3.8A volts.
PBSS4041NT,215 Features
the DC current gain for this device is 120 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 175MHz
PBSS4041NT,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4041NT,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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