PBSS4041NT,215
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- Mfr.Part #
- PBSS4041NT,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3.8A TO236AB
- Stock
- 85
- In Stock ：
- 85
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Frequency :
- 175MHz
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 60V
- Transistor Type :
- NPN
- Packaging :
- Cut Tape (CT)
- Power Dissipation :
- 1.1W
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2A 2V
- Terminal Form :
- Gull wing
- Max Collector Current :
- 3.8A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1.1W
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 60V
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 175MHz
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 4A
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 100nA
- Transition Frequency :
- 175MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Base Part Number :
- PBSS4041N
- hFE Min :
- 30
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- Published :
- 2009
- Number of Elements :
- 1
- Datasheets
- PBSS4041NT,215
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
PBSS4041NT,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 200mA, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 175MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 3.8A volts.
PBSS4041NT,215 Features
the DC current gain for this device is 120 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 175MHz
PBSS4041NT,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4041NT,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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