PBSS4032SN,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 2A 2V

Transistor Element Material :

SILICON

JESD-609 Code :

e4

Power Dissipation :

2.3W

Transistor Type :

2 NPN (Dual)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Transition Frequency :

140MHz

Number of Pins :

8

Max Collector Current :

5.7A

Collector Base Voltage (VCBO) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Terminal Form :

Gull wing

Published :

2010

Frequency :

140MHz

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

hFE Min :

300

Polarity :

NPN

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

30V

Collector Emitter Breakdown Voltage :

30V

Base Part Number :

PBSS4032SN

Gain Bandwidth Product :

140MHz

Pin Count :

8

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Max Power Dissipation :

2.3W

Current - Collector Cutoff (Max) :

100nA

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vce Saturation (Max) @ Ib, Ic :

450mV @ 300mA, 6A

ECCN Code :

EAR99

Mount :

Surface Mount

Radiation Hardening :

No

Element Configuration :

Dual