PBSS4032PZ,115

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Mfr.Part #
PBSS4032PZ,115
Manufacturer
Nexperia
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 30V 4.4A SOT223
Stock
638
In Stock :
638

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2010
Collector Emitter Breakdown Voltage :
30V
Element Configuration :
Single
Max Breakdown Voltage :
30V
Terminal Finish :
Tin (Sn)
Current - Collector Cutoff (Max) :
100nA
Operating Temperature :
150°C TJ
Vce Saturation (Max) @ Ib, Ic :
400mV @ 200mA, 4A
Base Part Number :
PBSS4032P
Packaging :
Tape and Reel (TR)
Emitter Base Voltage (VEBO) :
-5V
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-261-4, TO-261AA
Mount :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 2A 2V
Number of Elements :
1
JESD-609 Code :
e3
Gain Bandwidth Product :
130MHz
Power Dissipation :
2W
Collector Base Voltage (VCBO) :
30V
Max Power Dissipation :
2W
Collector Emitter Voltage (VCEO) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
4.4A
Factory Lead Time :
4 Weeks
Radiation Hardening :
No
hFE Min :
200
Transistor Type :
PNP
Number of Pins :
4
Frequency :
130MHz
Pin Count :
4
Mounting Type :
Surface Mount
Datasheets
PBSS4032PZ,115
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS4032PZ,115 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:PBSS4032P, Package / Case:TO-261-4, TO-261AA, Number of Pins:4, Mounting Type:Surface Mount, PBSS4032PZ,115 pinout, PBSS4032PZ,115 datasheet PDF, PBSS4032PZ,115 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS4032PZ,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS4032PZ,115


PNP 150°C TJ 100nA 1 Elements TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

PBSS4032PZ,115 Overview


This device has a DC current gain of 150 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 200mA, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.A breakdown input voltage of 30V volts can be used.A maximum collector current of 4.4A volts is possible.

PBSS4032PZ,115 Features


the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 400mV @ 200mA, 4A
the emitter base voltage is kept at -5V


PBSS4032PZ,115 Applications


There are a lot of Nexperia USA Inc.
PBSS4032PZ,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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