PBSS4032PX,115

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Mfr.Part #
PBSS4032PX,115
Manufacturer
Nexperia
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 30V 4.2A SOT89
Stock
22,058
In Stock :
22,058

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
2.5W
Number of Pins :
4
Pin Count :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 2A 2V
Terminal Finish :
Tin (Sn)
Radiation Hardening :
No
Collector Base Voltage (VCBO) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
100nA
Packaging :
Tape and Reel (TR)
Vce Saturation (Max) @ Ib, Ic :
400mV @ 200mA, 4A
Element Configuration :
Single
Mount :
Surface Mount
Operating Temperature :
150°C TJ
Base Part Number :
PBSS4032P
Collector Emitter Voltage (VCEO) :
400mV
Transistor Type :
PNP
Emitter Base Voltage (VEBO) :
-5V
Published :
2010
hFE Min :
200
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Gain Bandwidth Product :
115MHz
Package / Case :
TO-243AA
Max Power Dissipation :
2.5W
JESD-609 Code :
e3
Collector Emitter Breakdown Voltage :
30V
Max Breakdown Voltage :
30V
Max Collector Current :
4.2A
Factory Lead Time :
4 Weeks
Datasheets
PBSS4032PX,115
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS4032PX,115 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Operating Temperature:150°C TJ, Base Part Number:PBSS4032P, Mounting Type:Surface Mount, Package / Case:TO-243AA, PBSS4032PX,115 pinout, PBSS4032PX,115 datasheet PDF, PBSS4032PX,115 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS4032PX,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS4032PX,115


PNP 150°C TJ 100nA TO-243AA Tape & Reel (TR) Surface Mount

PBSS4032PX,115 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 2A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 200mA, 4A.The emitter base voltage can be kept at -5V for high efficiency.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 4.2A volts at Single BJT transistors maximum.

PBSS4032PX,115 Features


the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 400mV @ 200mA, 4A
the emitter base voltage is kept at -5V


PBSS4032PX,115 Applications


There are a lot of Nexperia USA Inc.
PBSS4032PX,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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