PBSS4032PT,215
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- Mfr.Part #
- PBSS4032PT,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 2.4A TO236AB
- Stock
- 84,363
- In Stock ：
- 84,363
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Frequency :
- 160MHz
- Max Power Dissipation :
- 1.1W
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Base Part Number :
- PBSS4032P
- Packaging :
- Cut Tape (CT)
- Current - Collector Cutoff (Max) :
- 100nA
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 200mA, 2A
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 30V
- Gain Bandwidth Product :
- 160MHz
- hFE Min :
- 150
- Power Dissipation :
- 1.1W
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Max Collector Current :
- 2.4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 160MHz
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 30V
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 30V
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 1A 2V
- Datasheets
- PBSS4032PT,215
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
PBSS4032PT,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 330mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2.4A volts.
PBSS4032PT,215 Features
the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 330mV @ 200mA, 2A
the emitter base voltage is kept at -5V
a transition frequency of 160MHz
PBSS4032PT,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4032PT,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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