PBSS4032PT,215
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- Mfr.Part #
- PBSS4032PT,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 2.4A TO236AB
- Stock
- 84,363
- In Stock ：
- 84,363
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 200mA, 2A
- Packaging :
- Cut Tape (CT)
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- -5V
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 30V
- Number of Terminations :
- 3
- Frequency :
- 160MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 2.4A
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Transition Frequency :
- 160MHz
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- PBSS4032P
- Published :
- 2009
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 1A 2V
- Power Dissipation :
- 1.1W
- Transistor Type :
- PNP
- hFE Min :
- 150
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 160MHz
- Element Configuration :
- Single
- Max Power Dissipation :
- 1.1W
- Collector Emitter Breakdown Voltage :
- 30V
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 30V
- Datasheets
- PBSS4032PT,215
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
PBSS4032PT,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 330mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2.4A volts.
PBSS4032PT,215 Features
the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 330mV @ 200mA, 2A
the emitter base voltage is kept at -5V
a transition frequency of 160MHz
PBSS4032PT,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4032PT,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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