PBSS4032PT,215
- Mfr.Part #
- PBSS4032PT,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 2.4A TO236AB
- Stock
- 84,363
- In Stock :
- 84,363
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Cut Tape (CT)
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 200mA, 2A
- Max Power Dissipation :
- 1.1W
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Number of Terminations :
- 3
- Base Part Number :
- PBSS4032P
- Collector Emitter Breakdown Voltage :
- 30V
- Gain Bandwidth Product :
- 160MHz
- Max Collector Current :
- 2.4A
- Transistor Application :
- SWITCHING
- hFE Min :
- 150
- Collector Base Voltage (VCBO) :
- 30V
- JESD-609 Code :
- e3
- Transition Frequency :
- 160MHz
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 160MHz
- Terminal Position :
- Dual
- Published :
- 2009
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Breakdown Voltage :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 1A 2V
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 1.1W
- REACH SVHC :
- No SVHC
- Datasheets
- PBSS4032PT,215
PBSS4032PT,215 Documents

PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
PBSS4032PT,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 330mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2.4A volts.
PBSS4032PT,215 Features
the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 330mV @ 200mA, 2A
the emitter base voltage is kept at -5V
a transition frequency of 160MHz
PBSS4032PT,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4032PT,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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