PBSS4032NX,115
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- Mfr.Part #
- PBSS4032NX,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 30V 4.7A SOT89
- Stock
- 2,298
- In Stock ：
- 2,298
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Max Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 270mA, 5.4A
- Power Dissipation :
- 2.5W
- Max Power Dissipation :
- 2.5W
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 145MHz
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 300
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Number of Pins :
- 4
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2A 2V
- Max Collector Current :
- 4.7A
- Radiation Hardening :
- No
- Base Part Number :
- PBSS4032N
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 145MHz
- Factory Lead Time :
- 4 Weeks
- Mount :
- Surface Mount
- Package / Case :
- TO-243AA
- Collector Emitter Voltage (VCEO) :
- 30V
- Published :
- 2010
- Datasheets
- PBSS4032NX,115
SOT89.jpg)
NPN 150°C TJ 100nA 1 Elements TO-243AA Tape & Reel (TR) Surface Mount
PBSS4032NX,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 2A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 340mV @ 270mA, 5.4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 4.7A volts at its maximum.
PBSS4032NX,115 Features
the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 340mV @ 270mA, 5.4A
the emitter base voltage is kept at 5V
PBSS4032NX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4032NX,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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