PBSS4032NX,115

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Mfr.Part #
PBSS4032NX,115
Manufacturer
Nexperia
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 30V 4.7A SOT89
Stock
2,298
In Stock :
2,298

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Element Configuration :
Single
Published :
2010
hFE Min :
300
Mounting Type :
Surface Mount
Collector Base Voltage (VCBO) :
30V
Terminal Finish :
Tin (Sn)
Package / Case :
TO-243AA
Operating Temperature :
150°C TJ
Max Collector Current :
4.7A
Emitter Base Voltage (VEBO) :
5V
Radiation Hardening :
No
Mount :
Surface Mount
Number of Pins :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gain Bandwidth Product :
145MHz
Max Power Dissipation :
2.5W
Vce Saturation (Max) @ Ib, Ic :
340mV @ 270mA, 5.4A
Current - Collector Cutoff (Max) :
100nA
Transistor Type :
NPN
Max Breakdown Voltage :
30V
Power Dissipation :
2.5W
Collector Emitter Voltage (VCEO) :
30V
JESD-609 Code :
e3
Number of Elements :
1
Collector Emitter Breakdown Voltage :
30V
Pin Count :
3
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
4 Weeks
Frequency :
145MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 2A 2V
Base Part Number :
PBSS4032N
Datasheets
PBSS4032NX,115
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS4032NX,115 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-243AA, Operating Temperature:150°C TJ, Number of Pins:4, Base Part Number:PBSS4032N, PBSS4032NX,115 pinout, PBSS4032NX,115 datasheet PDF, PBSS4032NX,115 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS4032NX,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS4032NX,115


NPN 150°C TJ 100nA 1 Elements TO-243AA Tape & Reel (TR) Surface Mount

PBSS4032NX,115 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 2A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 340mV @ 270mA, 5.4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 4.7A volts at its maximum.

PBSS4032NX,115 Features


the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 340mV @ 270mA, 5.4A
the emitter base voltage is kept at 5V


PBSS4032NX,115 Applications


There are a lot of Nexperia USA Inc.
PBSS4032NX,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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