PBSS4032ND,115
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- Mfr.Part #
- PBSS4032ND,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 30V 3.5A 6TSOP
- Stock
- 1,010
- In Stock ：
- 1,010
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SC-74, SOT-457
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 135MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 6
- Element Configuration :
- Single
- Max Power Dissipation :
- 1W
- Power Dissipation :
- 1W
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 400mA, 4A
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 6
- Lead Free :
- Lead Free
- Packaging :
- Cut Tape (CT)
- Current - Collector Cutoff (Max) :
- 100nA
- Frequency :
- 135MHz
- Collector Emitter Breakdown Voltage :
- 30V
- hFE Min :
- 60
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2A 2V
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 30V
- Transition Frequency :
- 135MHz
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Polarity :
- NPN, PNP
- Terminal Form :
- Gull wing
- Base Part Number :
- PBSS4032N
- Transistor Element Material :
- SILICON
- Pin Count :
- 6
- Factory Lead Time :
- 6 Weeks
- Max Collector Current :
- 3.5A
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 30V
- Datasheets
- PBSS4032ND,115
NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON SC-74, SOT-457 Cut Tape (CT) Surface Mount
PBSS4032ND,115 Overview
This device has a DC current gain of 250 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 300mV @ 400mA, 4A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 135MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 3.5A volts is possible.
PBSS4032ND,115 Features
the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 300mV @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 135MHz
PBSS4032ND,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4032ND,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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