PBSS4021PZ,115

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Mfr.Part #
PBSS4021PZ,115
Manufacturer
NXP Semiconductors
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 20V 6.6A SOT223
Stock
5,098
In Stock :
5,098

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Max Collector Current :
6.6A
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 4A 2V
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
20V
Emitter Base Voltage (VEBO) :
-5V
Number of Elements :
1
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
100nA
Terminal Finish :
Tin (Sn)
hFE Min :
250
Element Configuration :
Single
Lead Free :
Lead Free
Power Dissipation :
2.6W
Factory Lead Time :
4 Weeks
Frequency :
85MHz
Collector Emitter Breakdown Voltage :
20V
Operating Temperature :
150°C TJ
Base Part Number :
PBSS4021P
Gain Bandwidth Product :
85MHz
Packaging :
Tape and Reel (TR)
Mount :
Surface Mount
Collector Emitter Voltage (VCEO) :
20V
Vce Saturation (Max) @ Ib, Ic :
240mV @ 350mA, 7A
Number of Pins :
4
Package / Case :
TO-261-4, TO-261AA
Max Breakdown Voltage :
20V
Max Power Dissipation :
2.6W
JESD-609 Code :
e3
Published :
2010
Pin Count :
4
Datasheets
PBSS4021PZ,115
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4021PZ,115 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Base Part Number:PBSS4021P, Number of Pins:4, Package / Case:TO-261-4, TO-261AA, PBSS4021PZ,115 pinout, PBSS4021PZ,115 datasheet PDF, PBSS4021PZ,115 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors PBSS4021PZ,115 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PBSS4021PZ,115


PNP 150°C TJ 100nA 1 Elements TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

PBSS4021PZ,115 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 4A 2V.When VCE saturation is 240mV @ 350mA, 7A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 6.6A volts can be achieved.

PBSS4021PZ,115 Features


the DC current gain for this device is 150 @ 4A 2V
the vce saturation(Max) is 240mV @ 350mA, 7A
the emitter base voltage is kept at -5V


PBSS4021PZ,115 Applications


There are a lot of Nexperia USA Inc.
PBSS4021PZ,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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