PBSS3540MB,315
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- Mfr.Part #
- PBSS3540MB,315
- Manufacturer
- Nexperia
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.5A DFN1006B-3
- Stock
- 162,029
- In Stock ：
- 162,029
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- PBSS3540
- hFE Min :
- 200
- Pin Count :
- 3
- Mount :
- Surface Mount
- Max Collector Current :
- 500mA
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 300MHz
- Factory Lead Time :
- 8 Weeks
- Power - Max :
- 250mW
- Collector Base Voltage (VCBO) :
- -40V
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Max Power Dissipation :
- 590mW
- Emitter Base Voltage (VEBO) :
- -6V
- Max Breakdown Voltage :
- 40V
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- 3-XFDFN
- Collector Emitter Saturation Voltage :
- -50mV
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 10mA 2V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2012
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 50mV
- Vce Saturation (Max) @ Ib, Ic :
- 50mV @ 500μA, 10mA
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 40V
- Number of Pins :
- 3
- Datasheets
- PBSS3540MB,315
PNP 150°C TJ 100nA ICBO 3-XFDFN Tape & Reel (TR) Surface Mount
PBSS3540MB,315 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -50mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 50mV @ 500μA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 500mA volts.
PBSS3540MB,315 Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -50mV
the vce saturation(Max) is 50mV @ 500μA, 10mA
the emitter base voltage is kept at -6V
PBSS3540MB,315 Applications
There are a lot of Nexperia USA Inc.
PBSS3540MB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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