PBSS3540M,315
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- Mfr.Part #
- PBSS3540M,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.5A SOT883
- Stock
- 246,179
- In Stock ：
- 246,179
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Frequency :
- 300MHz
- Collector Emitter Breakdown Voltage :
- 40V
- Base Part Number :
- PBSS3540
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 500mA
- Max Power Dissipation :
- 430mW
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 40V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Pin Count :
- 3
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 300MHz
- JESD-609 Code :
- e3
- Transition Frequency :
- 300MHz
- Mount :
- Surface Mount
- Package / Case :
- SC-101, SOT-883
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Max Breakdown Voltage :
- 40V
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Published :
- 2002
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 500mA
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 40V
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 430mW
- Datasheets
- PBSS3540M,315
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-101, SOT-883 Tape & Reel (TR) Surface Mount
PBSS3540M,315 Overview
This device has a DC current gain of 150 @ 100mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 300MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 500mA volts.
PBSS3540M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 350mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
PBSS3540M,315 Applications
There are a lot of Nexperia USA Inc.
PBSS3540M,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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