PBSS3515MB,315
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- Mfr.Part #
- PBSS3515MB,315
- Manufacturer
- Nexperia
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS PNP 15V 0.5A DFN1006B-3
- Stock
- 44,889
- In Stock ：
- 44,889
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 10mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 25mV @ 500μA, 10mA
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -25mV
- Base Part Number :
- PBSS3515
- Collector Emitter Voltage (VCEO) :
- 15V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 15V
- Max Power Dissipation :
- 590mW
- Max Breakdown Voltage :
- 15V
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 280MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Frequency :
- 280MHz
- hFE Min :
- 200
- Max Collector Current :
- 500mA
- Pin Count :
- 3
- Power - Max :
- 250mW
- Collector Base Voltage (VCBO) :
- 15V
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- 3-XFDFN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2012
- Power Dissipation :
- 590mW
- Packaging :
- Tape and Reel (TR)
- Datasheets
- PBSS3515MB,315
PNP 150°C TJ 100nA ICBO 1 Elements 3-XFDFN Tape & Reel (TR) Surface Mount
PBSS3515MB,315 Overview
In this device, the DC current gain is 200 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -25mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 25mV @ 500μA, 10mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.An input voltage of 15V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
PBSS3515MB,315 Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -25mV
the vce saturation(Max) is 25mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
PBSS3515MB,315 Applications
There are a lot of Nexperia USA Inc.
PBSS3515MB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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