PBSS3515M,315
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- Mfr.Part #
- PBSS3515M,315
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS PNP 15V 500MA SOT883
- Stock
- 16,000
- In Stock ：
- 16,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Published :
- 2002
- Base Part Number :
- PBSS3515
- Gain Bandwidth Product :
- 280MHz
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Max Power Dissipation :
- 430mW
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 15V
- Transition Frequency :
- 280MHz
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 15V
- Power Dissipation :
- 430mW
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Emitter Base Voltage (VEBO) :
- -6V
- Collector Base Voltage (VCBO) :
- 15V
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Factory Lead Time :
- 8 Weeks
- Case Connection :
- COLLECTOR
- Transistor Type :
- PNP
- Frequency :
- 280MHz
- Terminal Position :
- BOTTOM
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 15V
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- hFE Min :
- 200
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Package / Case :
- SC-101, SOT-883
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Datasheets
- PBSS3515M,315
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-101, SOT-883 Tape & Reel (TR) Surface Mount
PBSS3515M,315 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 100mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -6V can result in a high level of efficiency.There is a transition frequency of 280MHz in the part.Single BJT transistor can be broken down at a voltage of 15V volts.When collector current reaches its maximum, it can reach 500mA volts.
PBSS3515M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 280MHz
PBSS3515M,315 Applications
There are a lot of Nexperia USA Inc.
PBSS3515M,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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