PBSS305ND,115
- Mfr.Part #
- PBSS305ND,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A SC-74
- Stock
- 2,235
- In Stock :
- 2,235
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 6
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 6
- Emitter Base Voltage (VEBO) :
- 5V
- Turn Off Time-Max (toff) :
- 589ns
- JESD-609 Code :
- e3
- Package / Case :
- SC-74, SOT-457
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 3A
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Transition Frequency :
- 140MHz
- Max Power Dissipation :
- 2.5W
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 400mA, 4A
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 500mA 2V
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 140MHz
- Current - Collector (Ic) (Max) :
- 1A
- Transistor Type :
- NPN
- Pin Count :
- 6
- Frequency :
- 140MHz
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 100V
- Base Part Number :
- PBSS305N
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 100V
- Radiation Hardening :
- No
- Power - Max :
- 1.1W
- Published :
- 2007
- Terminal Position :
- Dual
- Turn On Time-Max (ton) :
- 355ns
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Element Configuration :
- Single
- Power Dissipation :
- 2.5W
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Datasheets
- PBSS305ND,115

NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS305ND,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 170 @ 500mA 2V.When VCE saturation is 360mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 140MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
PBSS305ND,115 Features
the DC current gain for this device is 170 @ 500mA 2V
the vce saturation(Max) is 360mV @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
PBSS305ND,115 Applications
There are a lot of Nexperia USA Inc.
PBSS305ND,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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