PBSS304NZ,135
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- Mfr.Part #
- PBSS304NZ,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 5.2A SOT223
- Stock
- 10,423
- In Stock ：
- 10,423
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-261-4, TO-261AA
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- Gain Bandwidth Product :
- 130MHz
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2A 2V
- Element Configuration :
- Single
- Base Part Number :
- PBSS304N
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 60V
- Frequency :
- 130MHz
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 60V
- Collector-Base Capacitance-Max :
- 70pF
- Vce Saturation (Max) @ Ib, Ic :
- 280mV @ 260mA, 5.2A
- Collector Base Voltage (VCBO) :
- 60V
- Power Dissipation :
- 2W
- Number of Pins :
- 73
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 2W
- VCEsat-Max :
- 0.28 V
- Pin Count :
- 4
- Transition Frequency :
- 130MHz
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Max Collector Current :
- 5.2A
- JESD-30 Code :
- R-PDSO-G4
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PBSS304NZ,135
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS304NZ,135 Overview
In this device, the DC current gain is 250 @ 2A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 280mV @ 260mA, 5.2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 5.2A volts at Single BJT transistors maximum.
PBSS304NZ,135 Features
the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 280mV @ 260mA, 5.2A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
PBSS304NZ,135 Applications
There are a lot of Nexperia USA Inc.
PBSS304NZ,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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