PBSS304ND,115
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- Mfr.Part #
- PBSS304ND,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A 6TSOP
- Stock
- 8,830
- In Stock ：
- 8,830
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 140MHz
- Max Breakdown Voltage :
- 80V
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 80V
- Max Power Dissipation :
- 1.1W
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 6
- Gain Bandwidth Product :
- 140MHz
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 2.5W
- Transistor Type :
- NPN
- Frequency :
- 140MHz
- Element Configuration :
- Single
- Published :
- 2007
- Base Part Number :
- PBSS304N
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA
- Max Collector Current :
- 3A
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 240 @ 500mA 2V
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Number of Pins :
- 6
- ECCN Code :
- EAR99
- Package / Case :
- SC-74, SOT-457
- Current - Collector (Ic) (Max) :
- 1A
- Turn Off Time-Max (toff) :
- 583ns
- Vce Saturation (Max) @ Ib, Ic :
- 505mV @ 600mA, 6A
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Radiation Hardening :
- No
- Datasheets
- PBSS304ND,115
NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS304ND,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 240 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 505mV @ 600mA, 6A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 140MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
PBSS304ND,115 Features
the DC current gain for this device is 240 @ 500mA 2V
the vce saturation(Max) is 505mV @ 600mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
PBSS304ND,115 Applications
There are a lot of Nexperia USA Inc.
PBSS304ND,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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