PBSS303PX
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- Mfr.Part #
- PBSS303PX
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- PBSS303PX - 30 V, 5.1 A PNP LOW
- Stock
- 10,692
- In Stock ：
- 10,692
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- Manufacturer :
- Nexperia
- Product Category :
- Specialized ICs
- Operating Temperature :
- 150°C TJ
- Turn Off Time-Max (toff) :
- 320ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2A 2V
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 130MHz
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 2.1W
- Element Configuration :
- Single
- Base Part Number :
- PBSS303P
- Vce Saturation (Max) @ Ib, Ic :
- 230mV @ 255mA, 5.1A
- Lead Free :
- Lead Free
- Package / Case :
- TO-243AA
- Max Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 30V
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 130MHz
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 30V
- Max Collector Current :
- 5.1A
- Terminal Finish :
- Tin (Sn)
- Power - Max :
- 2.1W
- Transistor Application :
- SWITCHING
- Number of Pins :
- 4
- Case Connection :
- COLLECTOR
- Transistor Type :
- PNP
- JESD-30 Code :
- R-PSSO-F3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Turn On Time-Max (ton) :
- 70ns
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Datasheets
- PBSS303PX
PBSS303PX Documents
Specialized ICs Nexperia PBSS303PX Overview
The Specialized ICs Nexperia PBSS303PX is a high-performance Silicon PNP transistor tailored for applications requiring low voltage operation and high current handling capabilities. It supports a collector-base breakdown voltage of 30V and can handle collector currents up to 5.1A. The device boasts a low collector-emitter saturation voltage of only 230mV at 255mA, enabling efficient power management and reduced thermal load in circuit operation. With a DC current gain of 200 at a collector current of 2A, it offers consistent performance, even under varying load conditions. The transition frequency of 130MHz facilitates fast switching speeds, making the PBSS303PX suitable for high-frequency applications. Engineered for durability, it operates effectively up to temperatures of 150°C, ensuring reliability in challenging environments.
Specialized ICs Nexperia PBSS303PX Key Features
The DC current gain for this device is 200 @ 2A 2V
The vce saturation (Max) is 230mV @ 255mA, 5.1A
The emitter base voltage is kept at 5V
A transition frequency of 130MHz
Specialized ICs Nexperia PBSS303PX Applications
- Inverter
- Interface
- Driver
- Muting
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