PBSS303PX,115
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- Mfr.Part #
- PBSS303PX,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 5.1A SOT89
- Stock
- 12,410
- In Stock ：
- 12,410
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Max Power Dissipation :
- 2.1W
- Vce Saturation (Max) @ Ib, Ic :
- 230mV @ 255mA, 5.1A
- Terminal Form :
- Flat
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 5.1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2A 2V
- Collector Base Voltage (VCBO) :
- 30V
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 30V
- JESD-609 Code :
- e3
- Turn Off Time-Max (toff) :
- 320ns
- JESD-30 Code :
- R-PSSO-F3
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Published :
- 2009
- Turn On Time-Max (ton) :
- 70ns
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 4
- Base Part Number :
- PBSS303P
- Collector Emitter Breakdown Voltage :
- 30V
- Power - Max :
- 2.1W
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-243AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 130MHz
- Transition Frequency :
- 130MHz
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 30V
- Lead Free :
- Lead Free
- Datasheets
- PBSS303PX,115
SOT89.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS303PX,115 Overview
DC current gain in this device equals 200 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 230mV @ 255mA, 5.1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 130MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 5.1A volts.
PBSS303PX,115 Features
the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 230mV @ 255mA, 5.1A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
PBSS303PX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS303PX,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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