PBSS303PX,115
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- Mfr.Part #
- PBSS303PX,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 5.1A SOT89
- Stock
- 684
- In Stock ：
- 684
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 2.1W
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 5.1A
- Transition Frequency :
- 130MHz
- Power - Max :
- 2.1W
- Base Part Number :
- PBSS303P
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSSO-F3
- JESD-609 Code :
- e3
- Turn On Time-Max (ton) :
- 70ns
- Turn Off Time-Max (toff) :
- 320ns
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 130MHz
- Package / Case :
- TO-243AA
- Collector Emitter Breakdown Voltage :
- 30V
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 230mV @ 255mA, 5.1A
- Collector Base Voltage (VCBO) :
- 30V
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2A 2V
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- PBSS303PX,115
SOT89.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS303PX,115 Overview
DC current gain in this device equals 200 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 230mV @ 255mA, 5.1A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 130MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 5.1A volts.
PBSS303PX,115 Features
the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 230mV @ 255mA, 5.1A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
PBSS303PX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS303PX,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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