PBSS303PD,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

ECCN Code :

EAR99

Frequency :

110MHz

Gain Bandwidth Product :

110MHz

Factory Lead Time :

4 Weeks

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

60V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Power - Max :

1.1W

Published :

2009

Current - Collector (Ic) (Max) :

1A

Power Dissipation :

2.5W

Polarity/Channel Type :

PNP

Terminal Form :

Gull wing

Pin Count :

6

Number of Pins :

6

Vce Saturation (Max) @ Ib, Ic :

675mV @ 600mA, 6A

Mount :

Surface Mount

Max Collector Current :

3A

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

60V

Max Power Dissipation :

2.5W

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 500mA 2V

Base Part Number :

PBSS303P

Package / Case :

SC-74, SOT-457

Max Breakdown Voltage :

60V

Transistor Type :

PNP

Current - Collector Cutoff (Max) :

100nA

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Terminal Position :

Dual

Operating Temperature :

150°C TJ

Transition Frequency :

110MHz