PBSS303NZ,135
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- Mfr.Part #
- PBSS303NZ,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 30V 5.5A SOT223
- Stock
- 2,159
- In Stock ：
- 2,159
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- PBSS303N
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Turn On Time-Max (ton) :
- 65ns
- Transition Frequency :
- 130MHz
- Max Breakdown Voltage :
- 30V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2A 2V
- Mount :
- Surface Mount
- Published :
- 2009
- Number of Elements :
- 1
- Frequency :
- 130MHz
- Power Dissipation :
- 2W
- Case Connection :
- COLLECTOR
- Turn Off Time-Max (toff) :
- 375ns
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-G4
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 275mA, 5.5A
- JESD-609 Code :
- e3
- Number of Terminations :
- 4
- Max Power Dissipation :
- 2W
- Number of Pins :
- 73
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Gain Bandwidth Product :
- 130MHz
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 5.5A
- Package / Case :
- TO-261-4, TO-261AA
- Datasheets
- PBSS303NZ,135
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS303NZ,135 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 2A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 130MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 5.5A volts.
PBSS303NZ,135 Features
the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 240mV @ 275mA, 5.5A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
PBSS303NZ,135 Applications
There are a lot of Nexperia USA Inc.
PBSS303NZ,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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