PBSS303NX,115
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- Mfr.Part #
- PBSS303NX,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 30V 5.1A SOT89
- Stock
- 325
- In Stock ：
- 325
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Max Power Dissipation :
- 2.1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Frequency :
- 130MHz
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Max Collector Current :
- 5.1A
- Radiation Hardening :
- No
- Power Dissipation :
- 2.1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time-Max (ton) :
- 65ns
- Collector Base Voltage (VCBO) :
- 30V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-243AA
- Gain Bandwidth Product :
- 130MHz
- JESD-30 Code :
- R-PSSO-F3
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 255mA, 5.1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2A 2V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 30V
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 130MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2009
- Base Part Number :
- PBSS303N
- Terminal Form :
- Flat
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 30V
- Turn Off Time-Max (toff) :
- 375ns
- Datasheets
- PBSS303NX,115
PBSS303NX,115 Documents
SOT89.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS303NX,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 2A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 220mV @ 255mA, 5.1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 130MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 5.1A volts at its maximum.
PBSS303NX,115 Features
the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 220mV @ 255mA, 5.1A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
PBSS303NX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS303NX,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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