PBSS303NX,115
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- Mfr.Part #
- PBSS303NX,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 30V 5.1A SOT89
- Stock
- 325
- In Stock ：
- 325
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Flat
- Frequency :
- 130MHz
- Published :
- 2009
- Turn Off Time-Max (toff) :
- 375ns
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSSO-F3
- Collector Emitter Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Power Dissipation :
- 2.1W
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 30V
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time-Max (ton) :
- 65ns
- Number of Pins :
- 4
- Transition Frequency :
- 130MHz
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 130MHz
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2A 2V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 255mA, 5.1A
- Package / Case :
- TO-243AA
- Base Part Number :
- PBSS303N
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 2.1W
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Max Collector Current :
- 5.1A
- Datasheets
- PBSS303NX,115
SOT89.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS303NX,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 2A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 220mV @ 255mA, 5.1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 130MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 5.1A volts at its maximum.
PBSS303NX,115 Features
the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 220mV @ 255mA, 5.1A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
PBSS303NX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS303NX,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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