PBSS302PDH
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- Mfr.Part #
- PBSS302PDH
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS PNP 40V 4A 6TSOP
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 2A 2V
- Element Configuration :
- Single
- Max Collector Current :
- 4A
- Collector Emitter Saturation Voltage :
- -46mV
- Max Breakdown Voltage :
- 40V
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- -40V
- Number of Terminations :
- 6
- Collector Emitter Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 600mA, 6A
- Published :
- 2007
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 110MHz
- Pin Count :
- 6
- hFE Min :
- 200
- Max Power Dissipation :
- 2.5W
- Package / Case :
- SC-74, SOT-457
- Collector Emitter Voltage (VCEO) :
- 450mV
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Number of Pins :
- 6
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 110MHz
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -5V
- Power - Max :
- 360mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PBSS302PDH
PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS302PDH Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 175 @ 2A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -46mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 450mV @ 600mA, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 110MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 4A volts.
PBSS302PDH Features
the DC current gain for this device is 175 @ 2A 2V
a collector emitter saturation voltage of -46mV
the vce saturation(Max) is 450mV @ 600mA, 6A
the emitter base voltage is kept at -5V
a transition frequency of 110MHz
PBSS302PDH Applications
There are a lot of Nexperia USA Inc.
PBSS302PDH applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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