PBSS302NX,115
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- Mfr.Part #
- PBSS302NX,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 5.3A SOT89
- Stock
- 35,958
- In Stock ：
- 35,958
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 12.7mm
- Max Breakdown Voltage :
- 20V
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 140MHz
- Weight :
- 4.535924g
- Collector Base Voltage (VCBO) :
- 20V
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 2.1W
- Number of Terminations :
- 3
- Terminal Form :
- Flat
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 20V
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2.1W
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Package / Case :
- TO-243AA
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 140MHz
- ECCN Code :
- EAR99
- Max Collector Current :
- 5.3A
- Collector Emitter Voltage (VCEO) :
- 20V
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 265mA, 5.3A
- Number of Pins :
- 3
- Frequency :
- 140MHz
- Operating Temperature :
- 150°C TJ
- Published :
- 2009
- Element Configuration :
- Single
- Height :
- 6.35mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2A 2V
- Base Part Number :
- PBSS302N
- Width :
- 6.35mm
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Turn On Time-Max (ton) :
- 55ns
- JESD-609 Code :
- e3
- Datasheets
- PBSS302NX,115
SOT89.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS302NX,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 2A 2V.When VCE saturation is 200mV @ 265mA, 5.3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 140MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 5.3A volts can be achieved.
PBSS302NX,115 Features
the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 200mV @ 265mA, 5.3A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
PBSS302NX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS302NX,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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