PBSS301PD,115
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- Mfr.Part #
- PBSS301PD,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS PNP 20V 4A LOW SAT 6TSOP
- Stock
- 19,921
- In Stock ：
- 19,921
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Terminal Form :
- Gull wing
- Transition Frequency :
- 80MHz
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 20V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 6
- Emitter Base Voltage (VEBO) :
- -5V
- Radiation Hardening :
- No
- Package / Case :
- SC-74, SOT-457
- Frequency :
- 80MHz
- Gain Bandwidth Product :
- 80MHz
- Power Dissipation :
- 2.5W
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 6
- Max Collector Current :
- 4A
- JESD-609 Code :
- e3
- Base Part Number :
- PBSS301P
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 1.1W
- hFE Min :
- 80
- Max Breakdown Voltage :
- 20V
- Vce Saturation (Max) @ Ib, Ic :
- 420mV @ 600mA, 6A
- Collector Emitter Breakdown Voltage :
- 20V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Turn On Time-Max (ton) :
- 45ns
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2A 2V
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- Published :
- 2007
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power - Max :
- 1.1W
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 20V
- Number of Elements :
- 1
- Pin Count :
- 6
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Datasheets
- PBSS301PD,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS301PD,115 Overview
In this device, the DC current gain is 200 @ 2A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 420mV @ 600mA, 6A.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
PBSS301PD,115 Features
the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 420mV @ 600mA, 6A
the emitter base voltage is kept at -5V
a transition frequency of 80MHz
PBSS301PD,115 Applications
There are a lot of Nexperia USA Inc.
PBSS301PD,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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