PBR951,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity/Channel Type :

NPN

Surface Mount :

yes

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Frequency - Transition :

8GHz

HTS Code :

8541.21.00.75

Time@Peak Reflow Temperature-Max (s) :

40

Configuration :

Single

Noise Figure (dB Typ @ f) :

1.3dB ~ 2dB @ 1GHz ~ 2GHz

Power Dissipation-Max (Abs) :

0.365W

Pin Count :

3

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

1998

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 5mA 6V

Voltage - Collector Emitter Breakdown (Max) :

10V

Operating Temperature :

175°C TJ

Power - Max :

365mW

Transition Frequency :

8000MHz

Number of Terminations :

3

Additional Feature :

LOW NOISE, HIGH RELIABILITY

ECCN Code :

EAR99

Base Part Number :

PBR951

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Current - Collector (Ic) (Max) :

100mA

Transistor Application :

AMPLIFIER

Number of Elements :

1