NVD5867NLT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

6.73mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Case Connection :

DRAIN

Pbfree Code :

yes

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

6A Ta 22A Tc

Series :

Automotive, AEC-Q101

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

60V

Power Dissipation :

3.3W

Radiation Hardening :

No

Number of Terminations :

2

Element Configuration :

Single

Terminal Form :

Gull wing

Factory Lead Time :

48 Weeks

Number of Pins :

4

Rds On (Max) @ Id, Vgs :

39m Ω @ 11A, 10V

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

6A

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

22A

Width :

6.22mm

Fall Time (Typ) :

2.4 ns

Power Dissipation-Max :

3.3W Ta 43W Tc

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

675pF @ 25V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

18.2 ns

Number of Elements :

1

Height :

2.38mm

Lead Free :

Lead Free

Turn On Delay Time :

6.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

85A

Rise Time :

12.6ns

Drain-source On Resistance-Max :

0.05Ohm

Pin Count :

4

Lifecycle Status :

LIFETIME (Last Updated: 4 hours ago)