NVD5862NT4G
- Mfr.Part #
- NVD5862NT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 18A/98A DPAK
- Stock
- 14,179
- In Stock :
- 14,179
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.0057Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Fall Time (Typ) :
- 60 ns
- Avalanche Energy Rating (Eas) :
- 205 mJ
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSSO-G2
- Drain Current-Max (Abs) (ID) :
- 98A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 16 Weeks
- DS Breakdown Voltage-Min :
- 60V
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Lifecycle Status :
- LIFETIME (Last Updated: 1 day ago)
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 48A, 10V
- Rise Time :
- 70ns
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 18A
- Power Dissipation-Max :
- 4.1W Ta 115W Tc
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Surface Mount :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 18A Ta 98A Tc
- Turn-Off Delay Time :
- 35 ns
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Power Dissipation :
- 4.1W
- Published :
- 2010
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 18 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 25V
- Datasheets
- NVD5862NT4G

N-Channel Tape & Reel (TR) 5.7m Ω @ 48A, 10V ±20V 6000pF @ 25V 82nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
NVD5862NT4G Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 205 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6000pF @ 25V.This device conducts a continuous drain current (ID) of 18A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 98A.When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
NVD5862NT4G Features
the avalanche energy rating (Eas) is 205 mJ
a continuous drain current (ID) of 18A
the turn-off delay time is 35 ns
a 60V drain to source voltage (Vdss)
NVD5862NT4G Applications
There are a lot of ON Semiconductor
NVD5862NT4G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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