NVD5862NT4G

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Mfr.Part #
NVD5862NT4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 60V 18A/98A DPAK
Stock
14,179
In Stock :
14,179

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.0057Ohm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Fall Time (Typ) :
60 ns
Avalanche Energy Rating (Eas) :
205 mJ
Vgs (Max) :
±20V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSSO-G2
Drain Current-Max (Abs) (ID) :
98A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
16 Weeks
DS Breakdown Voltage-Min :
60V
Mounting Type :
Surface Mount
Case Connection :
DRAIN
Lifecycle Status :
LIFETIME (Last Updated: 1 day ago)
JESD-609 Code :
e3
Rds On (Max) @ Id, Vgs :
5.7m Ω @ 48A, 10V
Rise Time :
70ns
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
FET Type :
N-Channel
Pbfree Code :
yes
Continuous Drain Current (ID) :
18A
Power Dissipation-Max :
4.1W Ta 115W Tc
Element Configuration :
Single
Terminal Finish :
Tin (Sn)
Vgs(th) (Max) @ Id :
4V @ 250µA
Surface Mount :
yes
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Number of Pins :
3
Number of Terminations :
2
Number of Elements :
1
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
18A Ta 98A Tc
Turn-Off Delay Time :
35 ns
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
Lead Free :
Lead Free
Terminal Form :
Gull wing
Power Dissipation :
4.1W
Published :
2010
Radiation Hardening :
No
Operating Temperature :
-55°C~175°C TJ
Turn On Delay Time :
18 ns
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Datasheets
NVD5862NT4G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVD5862NT4G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, NVD5862NT4G pinout, NVD5862NT4G datasheet PDF, NVD5862NT4G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVD5862NT4G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVD5862NT4G


N-Channel Tape & Reel (TR) 5.7m Ω @ 48A, 10V ±20V 6000pF @ 25V 82nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

NVD5862NT4G Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 205 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6000pF @ 25V.This device conducts a continuous drain current (ID) of 18A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 98A.When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

NVD5862NT4G Features


the avalanche energy rating (Eas) is 205 mJ
a continuous drain current (ID) of 18A
the turn-off delay time is 35 ns
a 60V drain to source voltage (Vdss)


NVD5862NT4G Applications


There are a lot of ON Semiconductor
NVD5862NT4G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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