NVD5807NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Number of Elements :

1

Transistor Application :

SWITCHING

Factory Lead Time :

25 Weeks

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

40V

Fall Time (Typ) :

2 ns

Lead Free :

Lead Free

Number of Pins :

4

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Number of Terminations :

2

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

23A

Pin Count :

4

Power Dissipation-Max :

33W Tc

FET Type :

N-Channel

Power Dissipation :

33W

Published :

2014

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

603pF @ 25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lifecycle Status :

LIFETIME (Last Updated: 1 week ago)

Gate to Source Voltage (Vgs) :

20V

Rise Time :

20.4ns

Rds On (Max) @ Id, Vgs :

31m Ω @ 5A, 10V

Surface Mount :

yes