NTP75N06G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

225A

Fall Time (Typ) :

100 ns

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Current Rating :

75A

Time@Peak Reflow Temperature-Max (s) :

40

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Voltage - Rated DC :

60V

Packaging :

Tube

Case Connection :

DRAIN

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.0095Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Rise Time :

112ns

Current - Continuous Drain (Id) @ 25°C :

75A Ta

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

4510pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.4W Ta 214W Tj

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

844 mJ

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

90 ns

Number of Pins :

3

Transistor Application :

SWITCHING

Pbfree Code :

yes

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 37.5A, 10V

Published :

2010

Package / Case :

TO-220-3

Qualification Status :

Not Qualified

Element Configuration :

Single

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

75A

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Power Dissipation :

214W