NTP75N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

HTS Code :

8541.29.00.95

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

100 ns

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

75A Ta

Power Dissipation :

214W

Power Dissipation-Max :

2.4W Ta 214W Tj

Element Configuration :

Single

Reach Compliance Code :

not_compliant

Rise Time :

112ns

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

240

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 37.5A, 10V

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

60V

Avalanche Energy Rating (Eas) :

844 mJ

Lead Free :

Contains Lead

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Terminal Finish :

Tin/Lead (Sn80Pb20)

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Current Rating :

75A

ECCN Code :

EAR99

Continuous Drain Current (ID) :

75A

Voltage - Rated DC :

60V

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

225A

Transistor Application :

SWITCHING

Number of Terminations :

3

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

90 ns

Drain-source On Resistance-Max :

0.0095Ohm

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

4510pF @ 25V