NTP75N03RG

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Mfr.Part #
NTP75N03RG
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 25V 9.7A TO220AB
Stock
54,916
In Stock :
54,916

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.013Ohm
Surface Mount :
No
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
9.7A Ta
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
71.7 mJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1.333pF @ 20V
Pulsed Drain Current-Max (IDM) :
225A
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-220-3
DS Breakdown Voltage-Min :
25V
Rds On (Max) @ Id, Vgs :
8m Ω @ 20A, 10V
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
13.2nC @ 5V
Peak Reflow Temperature (Cel) :
260
Number of Terminations :
3
Pin Count :
3
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
2V @ 250μA
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
40
RoHS Status :
ROHS3 Compliant
Terminal Position :
Single
Packaging :
Tube
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max :
1.25W Ta 74.4W Tc
Qualification Status :
COMMERCIAL
Terminal Finish :
MATTE TIN
Drain to Source Voltage (Vdss) :
25V
Number of Elements :
1
JEDEC-95 Code :
TO-220AB
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain Current-Max (Abs) (ID) :
75A
Case Connection :
DRAIN
Datasheets
NTP75N03RG
Introducing Transistors - FETs, MOSFETs - Single onsemi NTP75N03RG from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, NTP75N03RG pinout, NTP75N03RG datasheet PDF, NTP75N03RG amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTP75N03RG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTP75N03RG


N-Channel Tube 8m Ω @ 20A, 10V ±20V 1.333pF @ 20V 13.2nC @ 5V 25V TO-220-3

NTP75N03RG Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 71.7 mJ.A device's maximal input capacitance is 1.333pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 225A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 25V.This transistor requires a 25V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

NTP75N03RG Features


the avalanche energy rating (Eas) is 71.7 mJ
based on its rated peak drain current 225A.
a 25V drain to source voltage (Vdss)


NTP75N03RG Applications


There are a lot of Rochester Electronics, LLC
NTP75N03RG applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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