NTP75N03RG
- Mfr.Part #
- NTP75N03RG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 9.7A TO220AB
- Stock
- 54,916
- In Stock :
- 54,916
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.013Ohm
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 9.7A Ta
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 71.7 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.333pF @ 20V
- Pulsed Drain Current-Max (IDM) :
- 225A
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- DS Breakdown Voltage-Min :
- 25V
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 20A, 10V
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 13.2nC @ 5V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Pin Count :
- 3
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Packaging :
- Tube
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max :
- 1.25W Ta 74.4W Tc
- Qualification Status :
- COMMERCIAL
- Terminal Finish :
- MATTE TIN
- Drain to Source Voltage (Vdss) :
- 25V
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain Current-Max (Abs) (ID) :
- 75A
- Case Connection :
- DRAIN
- Datasheets
- NTP75N03RG

N-Channel Tube 8m Ω @ 20A, 10V ±20V 1.333pF @ 20V 13.2nC @ 5V 25V TO-220-3
NTP75N03RG Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 71.7 mJ.A device's maximal input capacitance is 1.333pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 225A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 25V.This transistor requires a 25V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTP75N03RG Features
the avalanche energy rating (Eas) is 71.7 mJ
based on its rated peak drain current 225A.
a 25V drain to source voltage (Vdss)
NTP75N03RG Applications
There are a lot of Rochester Electronics, LLC
NTP75N03RG applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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