NTP75N03L09
- Mfr.Part #
- NTP75N03L09
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 75A TO220AB
- Stock
- 50,885
- In Stock :
- 50,885
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Contains Lead
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Rise Time :
- 130ns
- Peak Reflow Temperature (Cel) :
- 240
- Fall Time (Typ) :
- 105 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Voltage - Rated DC :
- 30V
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 65 ns
- Continuous Drain Current (ID) :
- 75A
- Power Dissipation-Max :
- 2.5W Ta 125W Tc
- Current Rating :
- 75A
- Pbfree Code :
- No
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 37.5A, 5V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- JESD-609 Code :
- e0
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- OBSOLETE (Last Updated: 2 days ago)
- Drain to Source Breakdown Voltage :
- 30V
- Drain-source On Resistance-Max :
- 0.008Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5635pF @ 25V
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Power Dissipation :
- 125W
- Packaging :
- Tube
- Published :
- 2005
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Package / Case :
- TO-220-3
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 5V
- Pulsed Drain Current-Max (IDM) :
- 225A
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- NTP75N03L09

N-Channel Tube 8m Ω @ 37.5A, 5V ±20V 5635pF @ 25V 75nC @ 5V TO-220-3
NTP75N03L09 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5635pF @ 25V.This device has a continuous drain current (ID) of [75A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 225A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (5V).
NTP75N03L09 Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 225A.
NTP75N03L09 Applications
There are a lot of ON Semiconductor
NTP75N03L09 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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