NTP75N03-006

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Mfr.Part #
NTP75N03-006
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 30V 75A TO220AB
Stock
75,084
In Stock :
75,084

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rise Time :
130ns
RoHS Status :
Non-RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds :
5635pF @ 25V
Lead Free :
Contains Lead
Voltage - Rated DC :
30V
Turn-Off Delay Time :
65 ns
Vgs(th) (Max) @ Id :
2V @ 250μA
Current Rating :
75A
Power Dissipation :
2.5W
Rds On (Max) @ Id, Vgs :
6.5m Ω @ 37.5A, 10V
Package / Case :
TO-220-3
FET Type :
N-Channel
Element Configuration :
Single
Published :
2003
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Packaging :
Tube
Drain to Source Breakdown Voltage :
30V
Mounting Type :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
75nC @ 5V
Power Dissipation-Max :
2.5W Ta 125W Tc
Fall Time (Typ) :
105 ns
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Continuous Drain Current (ID) :
75A
Datasheets
NTP75N03-006
Introducing Transistors - FETs, MOSFETs - Single onsemi NTP75N03-006 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, NTP75N03-006 pinout, NTP75N03-006 datasheet PDF, NTP75N03-006 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTP75N03-006 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTP75N03-006


N-Channel Tube 6.5m Ω @ 37.5A, 10V ±20V 5635pF @ 25V 75nC @ 5V TO-220-3

NTP75N03-006 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5635pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 65 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).

NTP75N03-006 Features


a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 65 ns


NTP75N03-006 Applications


There are a lot of ON Semiconductor
NTP75N03-006 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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