NTP75N03R

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Mfr.Part #
NTP75N03R
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 25V 9.7A TO220AB
Stock
5,343
In Stock :
5,343

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
Non-RoHS Compliant
Time@Peak Reflow Temperature-Max (s) :
30
JESD-30 Code :
R-PSFM-T3
Drain-source On Resistance-Max :
0.013Ohm
Input Capacitance (Ciss) (Max) @ Vds :
1.333pF @ 20V
Avalanche Energy Rating (Eas) :
71.7 mJ
Current - Continuous Drain (Id) @ 25°C :
9.7A Ta
Mounting Type :
Through Hole
FET Type :
N-Channel
Drain Current-Max (Abs) (ID) :
75A
Qualification Status :
COMMERCIAL
Rds On (Max) @ Id, Vgs :
8m Ω @ 20A, 10V
Operating Temperature :
-55°C~150°C TJ
Pin Count :
3
Vgs (Max) :
±20V
Surface Mount :
No
JESD-609 Code :
e0
Gate Charge (Qg) (Max) @ Vgs :
13.2nC @ 5V
Power Dissipation-Max :
1.25W Ta 74.4W Tc
Peak Reflow Temperature (Cel) :
240
Pulsed Drain Current-Max (IDM) :
225A
Package / Case :
TO-220-3
Number of Terminations :
3
Terminal Position :
Single
JEDEC-95 Code :
TO-220AB
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
25V
Transistor Application :
SWITCHING
Number of Elements :
1
Terminal Finish :
TIN LEAD
Packaging :
Tube
Pbfree Code :
yes
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
2V @ 250μA
DS Breakdown Voltage-Min :
25V
Operating Mode :
ENHANCEMENT MODE
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
NTP75N03R
Introducing Transistors - FETs, MOSFETs - Single onsemi NTP75N03R from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Terminations:3, NTP75N03R pinout, NTP75N03R datasheet PDF, NTP75N03R amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTP75N03R ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTP75N03R


N-Channel Tube 8m Ω @ 20A, 10V ±20V 1.333pF @ 20V 13.2nC @ 5V 25V TO-220-3

NTP75N03R Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 71.7 mJ.The maximum input capacitance of this device is 1.333pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 75A.There is no pulsed drain current maximum for this device based on its rated peak drain current 225A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 25V.The drain-to-source voltage (Vdss) of this transistor needs to be at 25V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

NTP75N03R Features


the avalanche energy rating (Eas) is 71.7 mJ
based on its rated peak drain current 225A.
a 25V drain to source voltage (Vdss)


NTP75N03R Applications


There are a lot of Rochester Electronics, LLC
NTP75N03R applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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