NTP65N02R

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Terminal Finish :

TIN LEAD

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 20A, 10V

Current - Continuous Drain (Id) @ 25°C :

7.6A Ta 58A Tc

Peak Reflow Temperature (Cel) :

240

Input Capacitance (Ciss) (Max) @ Vds :

1.33pF @ 20V

Terminal Position :

Single

DS Breakdown Voltage-Min :

25V

Pin Count :

3

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0105Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

25V

JESD-609 Code :

e0

Surface Mount :

No

Case Connection :

DRAIN

Power Dissipation-Max :

1.04W Ta 62.5W Tc

Vgs (Max) :

±20V

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

60 mJ

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 4.5V

Drain Current-Max (Abs) (ID) :

7.6A

Pulsed Drain Current-Max (IDM) :

160A

Number of Terminations :

3