NTP6412ANG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

58A

Length :

10.28mm

Packaging :

Tube

Fall Time (Typ) :

126 ns

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Width :

4.82mm

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Element Configuration :

Single

REACH SVHC :

No SVHC

Contact Plating :

Tin

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Pin Count :

3

Nominal Vgs :

4 V

Height :

15.75mm

Power Dissipation-Max :

167W Tc

Resistance :

18.2mOhm

Weight :

4.535924g

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Threshold Voltage :

4V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Rise Time :

140ns

Package / Case :

TO-220-3

Turn-Off Delay Time :

70 ns

Number of Elements :

1

Power Dissipation :

167W

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Factory Lead Time :

9 Weeks

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

100V

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

240A

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Published :

2009

Rds On (Max) @ Id, Vgs :

18.2m Ω @ 58A, 10V

Turn On Delay Time :

16 ns

Mounting Type :

Through Hole