NTP60N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3220pF @ 25V

Peak Reflow Temperature (Cel) :

240

Pulsed Drain Current-Max (IDM) :

180A

Drain-source On Resistance-Max :

0.014Ohm

Pbfree Code :

No

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

60A

Fall Time (Typ) :

142.5 ns

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Power Dissipation-Max :

2.4W Ta 150W Tj

Number of Elements :

1

FET Type :

N-Channel

Published :

2009

ECCN Code :

EAR99

Lead Free :

Contains Lead

Pin Count :

3

Number of Pins :

3

Drain to Source Breakdown Voltage :

60V

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

454 mJ

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

JEDEC-95 Code :

TO-220AB

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Element Configuration :

Single

Turn-Off Delay Time :

94.5 ns

Current - Continuous Drain (Id) @ 25°C :

60A Ta

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Rise Time :

180.7ns

Transistor Element Material :

SILICON

Voltage - Rated DC :

60V

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Number of Terminations :

3

Package / Case :

TO-220-3

Current Rating :

60A

JESD-609 Code :

e0

Terminal Finish :

Tin/Lead (Sn/Pb)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Power Dissipation :

150W

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant