NTP6410ANG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

190 ns

Nominal Vgs :

4 V

Published :

2009

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

No

Packaging :

Tube

Power Dissipation-Max :

188W Tc

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Rise Time :

170ns

Height :

4.82mm

Avalanche Energy Rating (Eas) :

500 mJ

Power Dissipation :

188W

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Weight :

4.535924g

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Number of Pins :

3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Width :

15.75mm

Pin Count :

3

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Rds On (Max) @ Id, Vgs :

13m Ω @ 76A, 10V

Turn-Off Delay Time :

120 ns

Factory Lead Time :

9 Weeks

Length :

10.28mm

Radiation Hardening :

No

Turn On Delay Time :

17 ns

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Continuous Drain Current (ID) :

76A

Element Configuration :

Single